N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV 1000V 20.5A 0.50 Ohm

Inductive Sensor

Features ■Ø 6.5 mm, smooth barrel ■Stainless steel, 1.4404 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 1 G, Ex zone 0 ■ATEX category II 1 D, Ex zone 20 ■SIL2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 with HFT0

10050 Extreme Compatible Transceiver SFP 10/100/1000Base-T (RJ45, Copper, 100m)

Features ATGBICS 10050 SFP operates on standard Category 5 unshielded twisted-pair copper cabling of link lengths up to 100m. Extreme 1000BASE-T SFP modules support 10/100/1000 auto negotiation and auto MDI/MDIX. Our product meets the specification of Extreme 10050= and we proudly offer a compa

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Nylon PCB Supports - Imperial Spacing

文件：126.42 Kbytes Page：1 Pages

5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件：143.45 Kbytes Page：2 Pages