P-Channel Mosfet

Application Load/Power Switching Interfacing Switching Logic Level Shift

P-Channel Enhancement Mode MOSFET

Features · -20V/-2.8A RDS(ON)= 56mW (typ.) @ VGS= -4.5V RDS(ON)= 85mW (typ.) @ VGS= -2.5V RDS(ON)= 106mW (typ.) @ VGS= -1.8V · Super High Dense Cell Design · Reliable and Rugged Applications · Power Management in Notebook Computer, Portable Equipment and Battery

P-Channel Enhancement Mode MOSFET

Features · -20V/-2.8A RDS(ON)= 56mW (typ.) @ VGS= -4.5V RDS(ON)= 85mW (typ.) @ VGS= -2.5V RDS(ON)= 106mW (typ.) @ VGS= -1.8V · Super High Dense Cell Design · Reliable and Rugged Applications · Power Management in Notebook Computer, Portable Equipment and Battery

场效应管(MOSFET)

MOS(场效应管)

P-Channel 20-V (D-S) MOSFET

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Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

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10V P-Channel Enhanced MOS FET

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-2.8A竊?20V P-CHANNEL MOSFET

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