Silicon PIN Diodes, Packaged and Bondable Chips

Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width

APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width Description The Isolink APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits

APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width Description The Isolink APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits

Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width

Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width

APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width Description The Isolink APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits

APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width Description The Isolink APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits

Hermetic Ceramic Packaged Silicon PIN Diode Devices

Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width

封装/外壳：模具 包装：卷带（TR） 描述：RF DIODE PIN 200V DIE 分立半导体产品 二极管 - 射频

PIN Diode Chips

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

3MTM Hi?밫ack Conformable Double Coated Tape

文件：49.7 Kbytes Page：2 Pages

24 AWG stranded (7x32) TC conductor, polyolefin insulation, individually shielded Beldfoil

文件：87.09 Kbytes Page：3 Pages