N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications.

N-Channel MOSFET uses advanced trench technology

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Single Drive Requirement

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Single Drive Requirement

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications.

N-channel Enhancement-mode Power MOSFET

DESCRIPTION The SSM9972GI achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for lowvoltage applications such as DC/DC converters and general switching circuits. The SSM9972GIisin TO-220CFM for through-hole mounting where a small footpr

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Description The SSM9972GS is in a TO-263package, whichis widely used for commercial and industrial surface mount applications,and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9972GP in TO-220,is available for low-footprint vertical mount

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low

N-Channel 60-V (D-S) MOSFET

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