型号 功能描述 生产厂家 企业 LOGO 操作

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-resistance ▼ Single Drive Requirement ▼ PDIP-8 Package

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltag

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applic

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applic

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltag

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package

ADPOW

Single Drive Requirement

文件:169.52 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Power MOSFETs

APEC

富鼎先进

N-Channel MOSFET uses advanced trench technology

文件:762.6 Kbytes Page:5 Pages

DOINGTER

杜因特

Fast Switching Characteristic

文件:102.39 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Single Drive Requirement

文件:102.63 Kbytes Page:4 Pages

A-POWER

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Fast Switching Characteristic

文件:102.39 Kbytes Page:5 Pages

A-POWER

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Fast Switching Characteristic

文件:102.39 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

APEC

富鼎先进

Single Drive Requirement

文件:102.63 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Power MOSFETs

APEC

富鼎先进

Single Drive Requirement

文件:93.36 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件:54.33 Kbytes Page:5 Pages

A-POWER

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N-Channel MOSFET uses advanced trench technology

文件:613.56 Kbytes Page:5 Pages

DOINGTER

杜因特

Simple Drive Requirement

文件:101.26 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件:58.86 Kbytes Page:5 Pages

A-POWER

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Simple Drive Requirement

文件:99.89 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Single Drive Requirement

文件:103.96 Kbytes Page:4 Pages

A-POWER

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Fast Switching Characteristic

文件:107.2 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Single Drive Requirement

文件:103.96 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件:107.2 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:217.12 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:94.75 Kbytes Page:4 Pages

A-POWER

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:216.14 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Single Drive Requirement

文件:216.14 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Electronic, 2 C #20 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 2 Conductor 20AWG (19x32) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

BELDEN

百通

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件:1.08472 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件:1.0847 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件:1.08464 Mbytes Page:9 Pages

VBSEMI

微碧半导体

AP9962产品属性

  • 类型

    描述

  • 型号

    AP9962

  • 制造商

    A-POWER

  • 制造商全称

    Advanced Power Electronics Corp.

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

更新时间:2025-12-25 17:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AP
22+
SOP8
20000
公司只做原装 品质保证
APEC/富鼎
新年份
TO-220
69850
一级代理原装正品现货,支持实单!
APEC
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
APEC/富鼎
21+
TO-251
6489
优势供应 实单必成 可13点增值税
APT
25+23+
SOP8
17627
绝对原装正品全新进口深圳现货
APEC富鼎
24+
TO-251
24960
公司现货库存 支持实单
AP
24+
SOP8
90000
一级代理商进口原装现货、价格合理
APEC
22+
SOP-8
8200
原装现货库存.价格优势!!
APEC/富鼎
23+
TO-251
24190
原装正品代理渠道价格优势
APEC
23+
TO-251
7300
专注配单,只做原装进口现货

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