AP60价格

参考价格:¥1.9518

型号:AP6015-18M10G-13 品牌:Diodes 备注:这里有AP60多少钱,2025年最近7天走势,今日出价,今日竞价,AP60批发/采购报价,AP60行情走势销售排行榜,AP60报价。
型号 功能描述 生产厂家 企业 LOGO 操作

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

WJCI

High Efficiency Step-Down Low Power DC-DC Converter

General Description The AP6015 is the first device in a family of low-noise current mode synchronous step-down DC-DC converters. It is ideally suited for systems powered by either a 1-cell Li-ion battery or a 2- to 3-cell NiCd/ NiMH/ Alkaline battery. Features ◾ High efficiency synchronous step

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

General Description The AP6015 is the first device in a family of low-noise current mode synchronous step-down DC-DC converters. It is ideally suited for systems powered by either a 1-cell Li-ion battery or a 2- to 3-cell NiCd/ NiMH/ Alkaline battery. Features ◾ High efficiency synchronous step

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

General Description The AP6015 is the first device in a family of low-noise current mode synchronous step-down DC-DC converters. It is ideally suited for systems powered by either a 1-cell Li-ion battery or a 2- to 3-cell NiCd/ NiMH/ Alkaline battery. Features ◾ High efficiency synchronous step

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

General Description The AP6015 is the first device in a family of low-noise current mode synchronous step-down DC-DC converters. It is ideally suited for systems powered by either a 1-cell Li-ion battery or a 2- to 3-cell NiCd/ NiMH/ Alkaline battery. Features ◾ High efficiency synchronous step

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

General Description The AP6015 is the first device in a family of low-noise current mode synchronous step-down DC-DC converters. It is ideally suited for systems powered by either a 1-cell Li-ion battery or a 2- to 3-cell NiCd/ NiMH/ Alkaline battery. Features ◾ High efficiency synchronous step

DIODES

美台半导体

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

WJCI

High Dynamic Range 4W 28V HBT Amplifier

Product Description The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compresse

WJCI

High Dynamic Range 4W 28V HBT Amplifier

Product Description The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compresse

WJCI

High Dynamic Range 4W 28V HBT Amplifier

Product Description The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compresse

WJCI

High Dynamic Range 4W 28V HBT Amplifier

Product Description The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compresse

WJCI

High Dynamic Range 4W 28V HBT Amplifier

Product Description The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compresse

WJCI

High Dynamic Range 7W 28V HBT Amplifier

Product Description The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compres

WJCI

High Dynamic Range 7W 28V HBT Amplifier

Product Description The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compres

WJCI

High Dynamic Range 7W 28V HBT Amplifier

Product Description The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compres

WJCI

High Dynamic Range 7W 28V HBT Amplifier

Product Description The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compres

WJCI

High Dynamic Range 7W 28V HBT Amplifier

Product Description The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compres

WJCI

Low Gate Charge Simple Drive Requirement

Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02GJ) is available for low-profile applications. ▼ Low Gate Charge ▼ Simple Driv

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited fo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited fo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

Simple Drive Requirement Low Gate Charge

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

Simple Drive Requirement, Low Gate Charge

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

Simple Drive Requirement, Low Gate Charge

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

Simple Drive Requirement Low Gate Charge

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. ▼ Simp

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

Simple Drive Requirement, Low Gate Charge

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

Simple Drive Requirement, Low Gate Charge

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo

A-POWER

富鼎先进电子

POWER MOSFETS

ETC

知名厂家

High Dynamic Range 1.8W 28V HBT Amplifier

QORVO

威讯联合

buck-converter

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

文件:302.61 Kbytes Page:18 Pages

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

文件:302.61 Kbytes Page:18 Pages

DIODES

美台半导体

封装/外壳:10-TFSOP,10-MSOP(0.118",3.00mm 宽) 功能:降压 包装:卷带(TR) 描述:IC REG BUCK 1.8V 800MA 10MSOP 集成电路(IC) 稳压器 - DC-DC 开关稳压器

DIODES

美台半导体

封装/外壳:10-TFSOP,10-MSOP(0.118",3.00mm 宽) 功能:降压 包装:卷带(TR) 描述:IC REG BUCK 2.5V 800MA 10MSOP 集成电路(IC) DC DC 开关稳压器

DIODES

美台半导体

High Efficiency Step-Down Low Power DC-DC Converter

文件:302.61 Kbytes Page:18 Pages

DIODES

美台半导体

Rack PDU, Basic, 0U/1U, 208V, 30A, (4) C19

文件:61.67 Kbytes Page:2 Pages

SCHNEIDER

施耐德

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67.27 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67.47 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:66.55 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67.26 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:65.42 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:66.59 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:66.9 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

Low On-Resistance Fast Switching

文件:67.16 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Low On-Resistance

文件:67.16 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Low On-Resistance Fast Switching

文件:72.63 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件:67.16 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:72.64 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件:70.38 Kbytes Page:5 Pages

A-POWER

富鼎先进电子

AP60产品属性

  • 类型

    描述

  • 型号

    AP60

  • 制造商

    Leviton Manufacturing Co

更新时间:2025-11-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA/
4126
原装现货,当天可交货,原型号开票
DIODES/美台
25+
MSOP10
54648
百分百原装现货 实单必成 欢迎询价
DIODES/美台
24+
MSOP10
990000
明嘉莱只做原装正品现货
DIODES/美台
2023+
MSOP10
2500
原厂全新正品旗舰店优势现货
DIODES/美台
2025+
MSOP10
2500
原装进口价格优 请找坤融电子!
DIODES/美台
2403+
MSOP10
11809
原装现货!欢迎随时咨询!
DIODES
24+
MSOP10
5000
全新原装正品,现货销售
DIODES
19+
MSOP-10L
200000
DIODES(美台)
2447
MSOP-10L
105000
2500只/圆盘一级代理专营品牌!原装正品,优势现货,
Diodes
22+
10-TFSOP
9000
原厂渠道,现货配单

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