AP60价格

参考价格:¥1.9518

型号:AP6015-18M10G-13 品牌:Diodes 备注:这里有AP60多少钱,2024年最近7天走势,今日出价,今日竞价,AP60批发/采购报价,AP60行情走势销售排行榜,AP60报价。
型号 功能描述 生产厂家&企业 LOGO 操作

High Dynamic Range 1.8W 28V HBT Amplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Efficiency Step-Down Low Power DC-DC Converter

GeneralDescription TheAP6015isthefirstdeviceinafamilyoflow-noisecurrentmodesynchronousstep-downDC-DCconverters.Itisideallysuitedforsystemspoweredbyeithera1-cellLi-ionbatteryora2-to3-cellNiCd/NiMH/Alkalinebattery. Features ◾Highefficiencysynchronousstep

DIODESDiodes Incorporated

达尔科技

DIODES

High Efficiency Step-Down Low Power DC-DC Converter

GeneralDescription TheAP6015isthefirstdeviceinafamilyoflow-noisecurrentmodesynchronousstep-downDC-DCconverters.Itisideallysuitedforsystemspoweredbyeithera1-cellLi-ionbatteryora2-to3-cellNiCd/NiMH/Alkalinebattery. Features ◾Highefficiencysynchronousstep

DIODESDiodes Incorporated

达尔科技

DIODES

High Efficiency Step-Down Low Power DC-DC Converter

GeneralDescription TheAP6015isthefirstdeviceinafamilyoflow-noisecurrentmodesynchronousstep-downDC-DCconverters.Itisideallysuitedforsystemspoweredbyeithera1-cellLi-ionbatteryora2-to3-cellNiCd/NiMH/Alkalinebattery. Features ◾Highefficiencysynchronousstep

DIODESDiodes Incorporated

达尔科技

DIODES

High Efficiency Step-Down Low Power DC-DC Converter

GeneralDescription TheAP6015isthefirstdeviceinafamilyoflow-noisecurrentmodesynchronousstep-downDC-DCconverters.Itisideallysuitedforsystemspoweredbyeithera1-cellLi-ionbatteryora2-to3-cellNiCd/NiMH/Alkalinebattery. Features ◾Highefficiencysynchronousstep

DIODESDiodes Incorporated

达尔科技

DIODES

High Efficiency Step-Down Low Power DC-DC Converter

GeneralDescription TheAP6015isthefirstdeviceinafamilyoflow-noisecurrentmodesynchronousstep-downDC-DCconverters.Itisideallysuitedforsystemspoweredbyeithera1-cellLi-ionbatteryora2-to3-cellNiCd/NiMH/Alkalinebattery. Features ◾Highefficiencysynchronousstep

DIODESDiodes Incorporated

达尔科技

DIODES

High Dynamic Range 1.8W 28V HBT Amplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

ProductDescription TheAP601isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhas13.5dBgain,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+32.5dBmofcompressed1dBpower.

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 4W 28V HBT Amplifier

ProductDescription TheAP602isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+35.7dBmofcompresse

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 4W 28V HBT Amplifier

ProductDescription TheAP602isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+35.7dBmofcompresse

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 4W 28V HBT Amplifier

ProductDescription TheAP602isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+35.7dBmofcompresse

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 4W 28V HBT Amplifier

ProductDescription TheAP602isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+35.7dBmofcompresse

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 4W 28V HBT Amplifier

ProductDescription TheAP602isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2400MHzapplicationswithupto+35.7dBmofcompresse

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 7W 28V HBT Amplifier

ProductDescription TheAP603isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2200MHzapplicationswithupto+38.5dBmofcompres

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 7W 28V HBT Amplifier

ProductDescription TheAP603isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2200MHzapplicationswithupto+38.5dBmofcompres

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 7W 28V HBT Amplifier

ProductDescription TheAP603isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2200MHzapplicationswithupto+38.5dBmofcompres

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 7W 28V HBT Amplifier

ProductDescription TheAP603isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2200MHzapplicationswithupto+38.5dBmofcompres

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

High Dynamic Range 7W 28V HBT Amplifier

ProductDescription TheAP603isahighdynamicrangepoweramplifierinalead-free/RoHS-compliant5x6mmpowerDFNSMTpackage.Thesinglestageamplifierhasexcellentbackofflinearity,whilebeingabletoachievehighperformancefor800-2200MHzapplicationswithupto+38.5dBmofcompres

WJCIWJ Communication. Inc.

WJ Communication. Inc.

WJCI

Low Gate Charge Simple Drive Requirement

Description TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP60L02GJ)isavailableforlow-profileapplications. ▼LowGateCharge ▼SimpleDriv

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedfo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercialindustrialsurfacemountapplicationsandsuitedfo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement Low Gate Charge

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement, Low Gate Charge

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement, Low Gate Charge

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement Low Gate Charge

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220CFMisolationpackageiswidelypreferredforcommercial-industrialthroughholeapplications. ▼Simp

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement, Low Gate Charge

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement, Low Gate Charge

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

High Efficiency Step-Down Low Power DC-DC Converter

文件:302.61 Kbytes Page:18 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

High Efficiency Step-Down Low Power DC-DC Converter

文件:302.61 Kbytes Page:18 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

封装/外壳:10-TFSOP,10-MSOP(0.118",3.00mm 宽) 功能:降压 包装:卷带(TR) 描述:IC REG BUCK 1.8V 800MA 10MSOP 集成电路(IC) 稳压器 - DC-DC 开关稳压器

PAMDiodes Incorporated

龙鼎威

PAM

封装/外壳:10-TFSOP,10-MSOP(0.118",3.00mm 宽) 功能:降压 包装:卷带(TR) 描述:IC REG BUCK 2.5V 800MA 10MSOP 集成电路(IC) DC DC 开关稳压器

PAMDiodes Incorporated

龙鼎威

PAM

High Efficiency Step-Down Low Power DC-DC Converter

文件:302.61 Kbytes Page:18 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

Rack PDU, Basic, 0U/1U, 208V, 30A, (4) C19

文件:61.67 Kbytes Page:2 Pages

SCHNEIDERSchneider electric

施耐德施耐德电气

SCHNEIDER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67.27 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67.47 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:66.55 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:67.26 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:65.42 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:66.59 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:66.9 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Low On-Resistance Fast Switching

文件:67.16 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Low On-Resistance

文件:67.16 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Low On-Resistance Fast Switching

文件:72.63 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Simple Drive Requirement

文件:67.16 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:72.64 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Fast Switching Characteristic

文件:70.38 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:72.64 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Low On-Resistance

文件:76.19 Kbytes Page:4 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

Fast Switching Characteristic

文件:70.38 Kbytes Page:5 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:77.66 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

AP60产品属性

  • 类型

    描述

  • 型号

    AP60

  • 制造商

    Leviton Manufacturing Co

更新时间:2024-5-17 23:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
20+
MSOP-10
32970
原装优势主营型号-可开原型号增税票
DIODES
2016+
MSOP-10
7400
只做原装,假一罚十,公司可开17%增值税发票!
DIODES
2020+
MSOP10
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
Diodes
23+
NA
10019
专做原装正品,假一罚百!
DIODES/美台
24+
MSOP10
990000
明嘉莱只做原装正品现货
DIODES/美台
22+
MSOP-10L
354000
DIODES/美台
1942+
MSOP10
9852
只做原装正品现货或订货!假一赔十!
DIODES
2020+
MSOP10
350000
100%进口原装正品公司现货库存
DIODES
21+
MSOP10
5657
优势代理渠道,原装正品,可全系列订货开增值税票
DiodesZetex
2021+
SOIC
57500
科研单位合格供应商!现货库存

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  • TI1
  • Vitec
  • ZSELEC

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    特点:•精确的参考电压AP431:2.495V±1%AP431A:2.495V±0.5%•灌电流能力:200毫安•最小阴极工作电流:300μA•等效满量程温度系数:30页/℃•快速导通响应•低动态输出阻抗:0.2Ω•可编程输出电压为36V•低输出噪声。•封装:TO92,采用SOT89,SOT23封装,SOT25和专科门诊

    2018-12-19