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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Simple Drive Requirement, Good Thermal Performance 文件：183.48 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 |   | ||
Simple Drive Requirement, Good Thermal Performance | APEC 富鼎先进 | | ||
Simple Drive Requirement 文件：183.48 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement, Fast Switching Performance 文件：124.68 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement, Fast Switching Performance | APEC 富鼎先进 | | ||
N-Chanel and P-Channel MOSFET use advanced trench technology 文件：3.7214 Mbytes Page：8 Pages | DOINGTER 杜因特 | | ||
Simple Drive Requirement 文件：124.68 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement, Good Thermal Performance, Fast Switching Performance 文件：126.42 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement, Good Thermal Performance, Fast Switching Performance | APEC 富鼎先进 | | ||
Simple Drive Requirement 文件：126.42 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50 | MOTOROLA 摩托罗拉 | | ||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FAIRCHILD 仙童半导体 | | ||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FAIRCHILD 仙童半导体 | | ||
SURFACE MOUNT SILICON ZENER DIODES VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free | EIC | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt | ZETEX | |
AP454产品属性
- 类型
描述
- 型号
AP454
- 制造商
PCTEL
- 功能描述
ANTENNA UNIT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AP |
25+23+ |
SSOP |
67749 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
AP |
24+ |
TO-252 |
35000 |
||||
APEC/富鼎 |
2403+ |
TO-252 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
BCD |
22+ |
TSSOP-28 |
8200 |
原装现货库存.价格优势!! |
|||
APEC |
16+ |
10000 |
APEC富鼎代理证件齐全进口原装假一罚十 |
||||
富鼎 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
SR |
23+ |
TO252-2 |
5000 |
原装正品,假一罚十 |
|||
APEC/富鼎 |
25+ |
TO-252 |
2500 |
全新原装正品支持含税 |
|||
APEC |
23+ |
TO-252(H) |
8000 |
公司只做原装，可来电咨询 |
|||
APEC |
22+ |
TO-252 |
20000 |
公司只做原装 品质保证 |
AP454芯片相关品牌
AP454规格书下载地址
AP454参数引脚图相关
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特点: •精确的参考电压 AP431：2.495V±1％ AP431A：2.495V±0.5％ •灌电流能力：200毫安 •最小阴极工作电流：300μA •等效满量程温度系数：30页/℃ •快速导通响应 •低动态输出阻抗：0.2Ω •可编程输出电压为36V •低输出噪声。 •封装：TO92，采用SOT89，SOT23封装，SOT25和 专科门诊
2018-12-19
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