Simple Drive Requirement, Fast Switching Characteristic

BVDSS 35V RDS(ON) 6.6mΩ ID 16A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface

Simple Drive Requirement, Fast Switching Characteristic

Simple Drive Requirement

文件：202.9 Kbytes Page：5 Pages

30V P-Channel MOSFET

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Product Summary VDS (V) = -30V I

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS &

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

Gasket design for optimal acoustic performance

文件：1.13772 Mbytes Page：19 Pages

30V P-Channel MOSFET

文件：174.72 Kbytes Page：4 Pages