N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. ▼ 100 Avalanche Tes

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3PF fullpack eliminates the need for additional insulating hardware in commercial-industrial applications.▼ 100% Avalanche Test\n▼ Simple Drive Requ

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3PF fullpack eliminates the need for additional insulating hardware in commercial-industrial applications. ▼ 100 Avalanche Test ▼ Simple Dri

Simple Drive Requirement

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Simple Drive Requirement

文件：114.58 Kbytes Page：4 Pages

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) •

300V, 30A PDP IGBT

文件：765.71 Kbytes Page：9 Pages

300V, 30A PDP IGBT

文件：695.88 Kbytes Page：7 Pages

300V, 30A PDP IGBT

文件：765.71 Kbytes Page：9 Pages