single-ldos

The AP2318A is a series of ultra low dropout\nregulators optimized for low voltage applications\nwhere transient response and minimum input voltage\nare critical.\nThe AP2318A provides current limit and thermal\nshutdown function. Its circuit includes a trimmed\nbandgap reference to assure output vo · Wide Operating Voltage Range: 2.5V to 12V\n· Output Voltage Accuracy: ±1.5%\n· On-chip Thermal Shutdown\n· ESD Rating: 3000V (Human Body Model) 600V (Machine Model)\n· Operation Junction Temperature: -40C to 125C;

Power Mosfets

1A ULDO REGULATOR WITH ENABLE

文件：709.03 Kbytes Page：13 Pages

封装/外壳：8-WDFN 裸露焊盘 包装：卷带（TR） 描述：IC REG LINEAR POS ADJ 1A 8DFN 集成电路（IC） 线性 + 开关稳压器

1A ULDO REGULATOR WITH ENABLE

文件：709.03 Kbytes Page：13 Pages

Capable of 2.5V Gate Drive, Small Outline Package, Surface Mount Device

Capable of 2.5V Gate Drive, Small Outline Package, Surface Mount Device

文件：64.84 Kbytes Page：4 Pages

Small Outline Package

文件：64.84 Kbytes Page：4 Pages

1A ULDO REGULATOR WITH ENABLE

文件：709.03 Kbytes Page：13 Pages

1A ULDO REGULATOR WITH ENABLE

文件：709.03 Kbytes Page：13 Pages

1A ULDO REGULATOR WITH ENABLE

文件：709.03 Kbytes Page：13 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽）裸露焊盘 包装：卷带（TR） 描述：IC REG LINEAR POS ADJ 1A 8PSOP 集成电路（IC） 稳压器 - 线性

1A ULDO REGULATOR WITH ENABLE

文件：709.03 Kbytes Page：13 Pages

Marktech 5mm Ultra Bright Y G LEDs

FEATURES • Excellent on/off contrasts • Low drive current • High intensity green and InGaAlP yellow • Choice of lens color • Can be packaged on tape in a reel or in a box

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: ● Collector–Emitter Voltage: VCE = 1500V ● Collector–Emitter

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne