N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package

Power MOSFETs

Capable of 2.5V gate drive, Small package outline

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package ▼RoHS Compliant

Small package outline

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Surface Mount Package

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2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

Nylon Hose Clamps

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2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

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P-CHANNEL MOSFET N-CHANNEL MOSFET

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20V N-Channel Enhancement MOS FET

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