型号 功能描述 生产厂家&企业 LOGO 操作
AP22814

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

SINGLECHANNELPOWERDISTRIBUTIONLOADSWITCH

Features InputVoltageRange:2.7Vto5.5V 50mΩOn-resistance Built-inSoft-startwith0.6msTypicalRiseTime FaultReport(FLG)withBlankingTime(6msTyp) ESDProtection:2kVHBM,200VMM ActiveLow(B)orActiveHigh(A)Enable Protection OverCurrentwithAutoRecover

DIODESDiodes Incorporated

美台半导体

DIODES

封装/外壳:SC-74A,SOT-753 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR SWITCH P-CHAN 1:1 SOT25 集成电路(IC) 配电开关,负载驱动器

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

PAM

封装/外壳:6-UDFN 裸露焊盘 包装:卷带(TR) 描述:IC PWR SWITCH P-CHAN 1:1 6UDFN 集成电路(IC) 配电开关,负载驱动器

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

PAM

Miniaturecompactsize.

文件:577.93 Kbytes Page:9 Pages

etc2List of Unclassifed Manufacturers

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更新时间:2025-8-4 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
22+
MSOP8
90000
正规代理渠道假一赔十
Diodes(美台)
24+
SOT-25
7501
原厂可订货,技术支持,直接渠道。可签保供合同
DIODES
24+
Tube
75000
郑重承诺只做原装进口现货
DIODES
23+
MSOP8
10500
原装元器件供应现货支持。咨询更多现货库存,支持样
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
Diodes Incorporated
23+
TO-18
12800
原装正品代理商最优惠价格,现货或订货
DiodesIncorporated
24+
U-DFN2020-6
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
1942+
SOT23-5
9852
只做原装正品现货或订货!假一赔十!
DIODES/美台
2023+
SOT23-5
8628
一级代理优势现货,全新正品直营店

AP22814芯片相关品牌

  • AMPHENOLCS
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

AP22814数据表相关新闻