N-Channel Mosfet

AP20N04D采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。 VDS = 40V，ID = 20A \nRDS（ON）<28mΩ\n@ V GS = -2.5V RDS（ON）<35mΩ\n@ V GS = -4.5V 高功率和电流处理能力\n无铅产品\nTO-252表贴封装;

20A, 40V N-CHANNEL ENHANCEMENT MODE

 DESCRIPTION The UTT20N04 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 33 mΩ @ VGS=10V, ID=10A RDS(ON) ≤ 60 mΩ @

丝印代码：Q20N04；N-ChannelEnhancement Mode Power MOSFET

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P-Channel 20-V (D-S) MOSFET

文件：215.72 Kbytes Page：4 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01535 Mbytes Page：8 Pages

丝印代码：Q20N04；N-Channel Enhancement Mode Field Effect Transistor

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