丝印代码：AP18N20D；200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =18A - RDS(ON)

丝印代码：AP18N20D；200V N-Channel Enhancement Mode MOSFET

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200V N-Channel Enhancement Mode MOSFET

N-Channel MOSFET 200V, 18A, 0.14廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

N-Channel MOSFET 200V, 18A, 0.14廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.145 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PAK (TO-262) POWE

POWER FIELD EFFECT TRANSISTOR

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