功率放大器

The AP1047 is a 2.4~ 2.5 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system opt Frequency: 2.4~2.5 GHz• Power Gain: typical 33.5dB / VCC=3.3V, Vref=2.85V                      typical 32dB/ VCC=4.5V, Vref=2.85Vtyp\n\n• P1dB: typical 29.5~30.5dBm @ CW signal / VCC=3.3V, Vref=2.85V\n\n• Linear Power: VCC=3.3V, Vref=2.85V: typical 22dBm @ 2.5% EVM                               ;

RECORDING Y/C AMPLIFIER

Description CXA1047M is a bipolar IC developed to process the recording signals (luminance/chroma signals) of 8mm videos.

Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications

Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 40mΩ at 4A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching