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位置：首页 > IC中文资料 > AP02

型号 功能描述 生产厂家 企业 LOGO 操作
NCEAP020N10LL

丝印代码：AP020N10LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

NCEPOWER

新洁能

NCEAP020N60GU

丝印代码：AP020N60GU；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP020N60GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEPOWER

新洁能

NCEAP020N85LL

丝印代码：AP020N85LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

NCEPOWER

新洁能

NCEAP023N10LL

丝印代码：AP023N10LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

NCEPOWER

新洁能

NCEAP025N60AG

丝印代码：AP025N60AG；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP025N60AG uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEPOWER

新洁能

NCEAP026N10T

丝印代码：AP026N10T；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP026N10T uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEPOWER

新洁能

NCEAP028N85D

丝印代码：AP028N85D；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The NCEAP028N85D uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEPOWER

新洁能

AP02/4

EVR-1kW | EVR-4kW | EVR-6kW Phase-Angle Power Controller

KEY FEATURES:  Wide range of control signal options (manual, voltage, or current input).  Convection air-cooled heatsink.  Soft-start function (adjustable 0–20 seconds) to protect loads and extend component life.  Integrated SCR-type (Triac protection) high-speed fuse.  Compact, enclosed

UNITEDAUTOMATION

AP02/4

110V, 230V, 400V High Power Three Phase Thyristor Driver

KEY FEATURES:  Auto Phase Rotation Correction & Phase-Loss Detection.  Switch-Selectable Phasing Reversal.  Versatile Control Modes: Phase-Angle, Burst-Fire, Combination  Opto-Isolated Analogue/Digital Input Options.  Load Type Selection Switch: Tailors performance for resistive or induc

UNITEDAUTOMATION

AP0200AT

图像信号处理器，2 MP

AP0200AT 是一款专用的汽车图像协处理器，能够实现使用安森美半导体百万像素高动态范围 (HDR) 传感器的灵活摄像头平台。传感器和协处理器的双芯片解决方案可实现多种摄像头价格和性能点，能够重用电路板设计，进入市场快，实现设计灵活性。传感器性能由于减少了一个单独协处理器芯片的发热而得以提高，同时可实现高性能功能。AP0200AT 提供以太网输出，最高可支持 2 百万像素传感器。 它包括一个空间传输引擎，最高可结合 1.2 MP 传感器使用，提供 185 度鱼眼镜头失真校正、透视校正，以及分割侧视、三联镜和拖车挂钩等多视角选项。此协处理器结合安森美半导体的 AR0230AT、AR0132AT • HDR\n• Ethernet;

ONSEMI

安森美半导体

AP0201AT

Image Signal Processor, 2 MP

AP0201AT is a dedicated automotive image co-processor that enables flexible camera platforms using high performance ON Semiconductor megapixel high dynamic range (HDR) sensors. The two-chip solution of sensor and co-processor allows for multiple camera price and performance points with re-use of cir • HDR\n• Ethernet;

ONSEMI

安森美半导体

AP02SLASH4

EVR-1kW | EVR-4kW | EVR-6kW Phase-Angle Power Controller

KEY FEATURES:  Wide range of control signal options (manual, voltage, or current input).  Convection air-cooled heatsink.  Soft-start function (adjustable 0–20 seconds) to protect loads and extend component life.  Integrated SCR-type (Triac protection) high-speed fuse.  Compact, enclosed

UNITEDAUTOMATION

AP02SLASH4

110V, 230V, 400V High Power Three Phase Thyristor Driver

KEY FEATURES:  Auto Phase Rotation Correction & Phase-Loss Detection.  Switch-Selectable Phasing Reversal.  Versatile Control Modes: Phase-Angle, Burst-Fire, Combination  Opto-Isolated Analogue/Digital Input Options.  Load Type Selection Switch: Tailors performance for resistive or induc

UNITEDAUTOMATION

AP020/021-1

包装：袋 描述：BNC ADAPTER FOR AP020/021 测试与计量 配件

TELEDYNE

华特力科

AP020/021-2

包装：盒 描述：GROUND BAYONET AP020/021 测试与计量 配件

TELEDYNE

华特力科

AP02001

SUGGESTED PAD LAYOUT

文件：174 Kbytes Page：12 Pages

DIODES

美台半导体

AP02001

SUGGESTED PAD LAYOUT

文件：404.18 Kbytes Page：27 Pages

DIODES

美台半导体

AP02001

SUGGESTED PAD LAYOUT

文件：188.29 Kbytes Page：14 Pages

DIODES

美台半导体

AP02001_1

SUGGESTED PAD LAYOUT

文件：188.29 Kbytes Page：14 Pages

DIODES

美台半导体

AP02001_12

SUGGESTED PAD LAYOUT

文件：404.18 Kbytes Page：27 Pages

DIODES

美台半导体

AP02002

PACKAGE OUTLINE DIMENSIONS

文件：1.15453 Mbytes Page：51 Pages

DIODES

美台半导体

AP02002

PACKAGE OUTLINE DIMENSIONS

文件：776.88 Kbytes Page：32 Pages

DIODES

美台半导体

AP02002

PACKAGE OUTLINE DIMENSIONS

文件：775.51 Kbytes Page：36 Pages

DIODES

美台半导体

AP02002

PACKAGE OUTLINE DIMENSIONS

DIODES

美台半导体

AP02002_1

PACKAGE OUTLINE DIMENSIONS

文件：775.51 Kbytes Page：36 Pages

DIODES

美台半导体

AP02002_12

PACKAGE OUTLINE DIMENSIONS

文件：1.15453 Mbytes Page：51 Pages

DIODES

美台半导体

AP0201AT

AP0201AT High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：473.35 Kbytes Page：31 Pages

ONSEMI

安森美半导体

AP0201AT2L00XEGA0-DR

AP0201AT High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：473.35 Kbytes Page：31 Pages

ONSEMI

安森美半导体

AP0201AT2L00XEGA0-TR

AP0201AT High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：473.35 Kbytes Page：31 Pages

ONSEMI

安森美半导体

AP0201AT2L00XEGAD3-GEVK

AP0201AT High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：473.35 Kbytes Page：31 Pages

ONSEMI

安森美半导体

AP0201AT2L00XEGAH3-GEVB

AP0201AT High-Dynamic Range (HDR) Image Signal Processor (ISP)

文件：473.35 Kbytes Page：31 Pages

ONSEMI

安森美半导体

AP0202AT

High-Dynamic Range Image Signal Processor

文件：1.7275 Mbytes Page：54 Pages

ONSEMI

安森美半导体

AP0203GMT-HF

Simple Drive Requirement SO-8 Compatible with Heatsink

文件：101.45 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP0203GMT-HF_14

Simple Drive Requirement

文件：101.45 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP0203GMT-HF_16

SO-8 Compatible with Heatsink

文件：102.71 Kbytes Page：5 Pages

A-POWER

富鼎先进电子

AP0203GMT-L

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：71.73 Kbytes Page：5 Pages

A-POWER

富鼎先进电子

AP02N40H

Fast Switching Characteristic

文件：104.68 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40H/J

Fast Switching Characteristic

文件：104.68 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40H-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：103.64 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40H-HF_16

Fast Switching Characteristic

文件：62.96 Kbytes Page：5 Pages

A-POWER

富鼎先进电子

AP02N40H-J

Fast Switching Characteristic

文件：104.68 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40HSLASHJ

Fast Switching Characteristic

文件：104.68 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40I-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：99.04 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40J-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：103.64 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40K-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：100.54 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N40P

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：98.26 Kbytes Page：5 Pages

A-POWER

富鼎先进电子

AP02N60H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：61.91 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N60H

N-Channel 650 V (D-S) MOSFET

文件：1.0859 Mbytes Page：9 Pages

VBSEMI

微碧半导体

AP02N60H_08

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：107.72 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N60H-H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：252.12 Kbytes Page：6 Pages

A-POWER

富鼎先进电子

AP02N60H-H

N-Channel 650 V (D-S) MOSFET

文件：1.08592 Mbytes Page：9 Pages

VBSEMI

微碧半导体

AP02N60H-HF

N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes Page：9 Pages

VBSEMI

微碧半导体

AP02N60H-HF_14

Simple Drive Requirement

文件：105.75 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N60H-H-HF

N-Channel 650 V (D-S) MOSFET

文件：1.08594 Mbytes Page：9 Pages

VBSEMI

微碧半导体

AP02N60H-H-HF_14

Fast Switching Characteristic

文件：72.09 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N60I

N-CHANNEL ENHANCEMENT MODE

文件：86.36 Kbytes Page：6 Pages

A-POWER

富鼎先进电子

AP02N60I_08

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：114.44 Kbytes Page：7 Pages

A-POWER

富鼎先进电子

AP02N60I_14

Simple Drive Requirement

文件：114.44 Kbytes Page：7 Pages

A-POWER

富鼎先进电子

AP02N60I-A-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：57.17 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02N60I-A-HF_14

Fast Switching Characteristic

文件：57.17 Kbytes Page：4 Pages

A-POWER

富鼎先进电子

AP02产品属性

  • 类型

    描述

  • Configuration：

    Single

  • Type：

    N

  • V DS (V)：

    30

  • V GS (V)：

    ±20

  • ID(A)_Tc=25 ℃：

    155

  • RDS(ON)(mΩ)max.at VGS=10V：

    2.2

  • RDS(ON)(mΩ)max.at VGS=4.5V：

    3.6

AP02供应商更多...

更新时间：2026-7-24 16:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市中联芯电子有限公司
NCE0101MOS(场效应管)
NCE/新洁能
25+
SOT-23
12500
原装正品假一赔百
询价
深圳市富芯乐电子科技有限公司
NCE0101
NCE/新洁能
25+
SOT-23
60000
全新原装现货特价销售,欢迎来电查询
询价
深圳市星辰微电科技有限公司
NCE0101
NCE新洁能
25+
SOT-23
100000
新结能全线供应,支持终端生产
询价
洪芯国际半导体（深圳）有限公司
NCE0101
NCE
26+
To-252
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
询价
深圳市祥瑞智科技有限公司
NCE0102
NCE新洁能
25+
SOT-23
24000
原厂原装,价格优势
询价
深圳市芯皇电子有限公司
NCE0101
NCE新洁能
22+
SOT-23
95000
专业配单,原装正品假一罚十,代理渠道价格优
询价
深圳市宇创芯科技有限公司
NCE0102
NCEPOWER
24+
SOT-23
9600
原装现货,优势供应,支持实单!
询价
艾睿（深圳）半导体有限公司
NCE0102
无锡新洁能
2447
SOT-23(SOT-23-3)
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
深圳市创新迹电子有限公司
NCE0101
NCEPOWER
22+
SOT-23
20000
只做原装
询价
富凯科技(深圳）有限公司
NCE0101
NCE/新洁能
24+
SOT-23
50000
只做原装，欢迎询价，量大价优
询价

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