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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AOWF7S60 | 600V7AaMOSTMPowerTransistor GeneralDescription TheAOW7S60&AOWF7S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythe | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  |   |
600V7AaMOSPowerTransistor GeneralDescription TheAOT7S60&AOB7S60&AOTF7S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：299.64 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
AOWF7S60产品属性
- 类型
描述
- 型号
AOWF7S60
- 功能描述
MOSFET N-CH 600V 7A TO262F
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
14+ |
TO-262F |
390 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AOS |
2016+ |
TO-262F |
6528 |
房间原装进口现货假一赔十 |
|||
AOS/万代 |
22+ |
TO262F |
25000 |
AOS/万代全系列在售 |
|||
AOS |
2019 |
TO-262F-3 |
55000 |
原装正品现货假一赔十 |
|||
AOS/ 万代 |
23+ |
TO262F |
400 |
原装正品,假一罚十! |
|||
Alpha & Omega Semiconductor In |
21+ |
TO2623 Long Leads I2Pak TO262A |
13880 |
公司只售原装,支持实单 |
|||
AOS/万代 |
23+ |
NA/ |
384 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
AO/万代 |
22+ |
TO-262F |
34137 |
只做原装进口现货 |
|||
AOS |
22+ |
NA |
6878 |
加我QQ或微信咨询更多详细信息, |
|||
AOS/万代 |
TO-262F-3 |
265209 |
假一罚十原包原标签常备现货! |
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AOWF7S60规格书下载地址
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DdatasheetPDF页码索引
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