N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU452 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU452 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

GAS DISCHARGE TUBE - 8x10mm

This product is not recommended for new designs. Please refer to Littelfuse series SL1021A. 3-electrode (20kA/10A) Enhanced Discharge Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protecti

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3M Scotch-Weld??Instant Adhesive Activators and Primers

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