位置:首页 > IC中文资料第8528页 > AOU448
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOU448 | N-Channel Enhancement Mode Field Effect Transistor General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU4 | AOSMD 万国半导体 | ||
AOU448 | N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | ||
AOU448 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | ||
AOU448 | N-Channel Enhancement Mode Field Effect Transistor | AOS 美国万代 | ||
N-Channel Enhancement Mode Field Effect Transistor General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU4 | AOSMD 万国半导体 | |||
Power MOSFET(Vdss=500V, Rds(on)=0.60ohm, Id=11A) DESCRIPTION Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S | IRF | |||
N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives | AnalogPower | |||
N-Channel Enhancement Mode Field Effect Transistor General Description The AOD448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD448 is Pb-free (meets ROHS & Sony 259 specifications). AO | AOSMD 万国半导体 | |||
Linear motion 0.2 watt composition slide control 文件:110.65 Kbytes Page:4 Pages | CTS 西迪斯 | |||
Surface Mount Fuses 文件:204.23 Kbytes Page:4 Pages | Littelfuse 力特 |
AOU448产品属性
- 类型
描述
- 型号
AOU448
- 制造商
AOSMD
- 制造商全称
Alpha & Omega Semiconductors
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO251 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VB |
25+ |
TO-251 |
5000 |
原装正品,欢迎来电咨询! |
|||
VB |
24+ |
TO-251 |
19797 |
公司现货库存 支持实单 |
|||
AOS/万代 |
21+ |
TO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/万代 |
24+ |
NA/ |
660 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
AOS |
25+23+ |
TO251 |
75458 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
AO |
24+ |
TO-251 |
14 |
||||
AOS/万代 |
23+ |
TO-251 |
24190 |
原装正品代理渠道价格优势 |
|||
SR |
23+ |
TO251 |
6000 |
原装正品,假一罚十 |
|||
AOS |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
AOU448规格书下载地址
AOU448参数引脚图相关
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DdatasheetPDF页码索引
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