N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU404 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU404 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

Integrated Soldier Power and Data Management System (ISPDS) with Integrated SOM

FEATURES DESCRIPTION The modern digital soldier is a fully equipped, advanced weapon and communication systems - outfitted with a multitude of electronic devices. These devices, such as a navigation systems, battery packs, headsets, warning sensors, video visor for weapons, night vision glass

Capacity (20-hour) 77Ah

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Position Sensor

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4 and 7-port industrial-grade USB hubs

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