isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU402 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU402 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages