isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -26A@ TC=25℃ ·Drain Source Voltage : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU401 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU401 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU401 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU401 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

SPACERS & STANDOFFS

文件：282.99 Kbytes Page：1 Pages

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages

Kapazit채t 20 Std (vorgegeben) 60Ah

文件：1.1342 Mbytes Page：2 Pages

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

Extruded Heat Sinks

文件：351.51 Kbytes Page：7 Pages