N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product order

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 38A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU400 is Pb-free (meets ROHS & Sony 259 specifications). AOU400L is a Green Product order

ROCKER SWITCHES - SUB-MINIATURE

文件：699.82 Kbytes Page：5 Pages

Radial Lead Fuses

文件：999.33 Kbytes Page：3 Pages

DC axial fans

文件：704.92 Kbytes Page：3 Pages

DC axial fans

文件：430.87 Kbytes Page：3 Pages

DC diagonal fans

文件：426.57 Kbytes Page：3 Pages