N-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHs Compliant Features VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Enhancement Mode Field Effect Transistor

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

Silicon NPN Transistor RF Power Output

Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: • Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficie

VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER

Very Low Noise Quad Operational Amplifier

Very Low Noise Quad Operational Amplifier

GENERAL DESCRIPTION The OP470 is a high-performance monolithic quad operational amplifier with exceptionally low voltage noise, 5 nV/√Hz at 1 kHz max, offering comparable performance to ADI’s industry standard OP27. The OP470 features an input offset voltage below 0.4 mV, excellent for a quad op

Very Low Noise Quad Operational Amplifier

GENERAL DESCRIPTION The OP470 is a high-performance monolithic quad operational amplifier with exceptionally low voltage noise, 5 nV/√Hz at 1 kHz max, offering comparable performance to ADI’s industry standard OP27. The OP470 features an input offset voltage below 0.4 mV, excellent for a quad op