N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOT404 is Pb-free (meets ROHS

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 40A@ TC=25℃ Drain Source Voltage- : VDSS= 105V(Min) • Static Drain-Source On-Resistance : RDS(on) = 28mΩ (Max) • 100 avalanche tested • Minimum Lot-to

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOT404 is Pb-free (meets ROHS

Chopper Transistor

Chopper Transistor PNP Silicon

Chopper Transistor

Chopper Transistor PNP Silicon

Wideband, High-Slew Rate, Monolithic Op Amp

文件：374.92 Kbytes Page：6 Pages

Wideband, High-Slew Rate, Monolithic Op Amp

文件：374.92 Kbytes Page：6 Pages

Wideband, High-Slew Rate, Monolithic Op Amp

文件：374.92 Kbytes Page：6 Pages