isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOSFET：N-Channel

High Current Capability

文件：430.45 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Plastic Encapsulated Device

文件：79.62 Kbytes Page：3 Pages

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 11A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.44Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and AC-DC applications

Plastic Encapsulated Device

文件：79.66 Kbytes Page：3 Pages