Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages