Complementary Enhancement Mode Field Effect Transistor

General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb free (meets ROHS & Sony 259 specifications). AOP609L

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb free (meets ROHS & Sony 259 specifications). AOP609L

3 V/5 V, 4/8 Channel High Performance Analog Multiplexers

GENERAL DESCRIPTION The ADG608 and ADG609 are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels respectively, fully specified for ±5 V, +5 V and +3 V power supplies. The ADG608 switches one of eight inputs to a common output as determined by the 3

3 V/5 V, 4/8 Channel High Performance Analog Multiplexers

GENERAL DESCRIPTION The ADG608 and ADG609 are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels respectively, fully specified for ±5 V, +5 V and +3 V power supplies. The ADG608 switches one of eight inputs to a common output as determined by the 3

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 5380 A Surge current 50.4 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 6825 A Surge current 60 kA

HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER

DESCRIPTION The optically coupled isolator SFH 609 features a high current transfer ratio as well as high isolation voltage, and uses as emitter a GaAs infrared emitting diode which is optically coupled with a silicon planar phototransistor acting as detector. The component is incorporated in a