Complementary Enhancement Mode Field Effect Transistor

General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is H

Complementary Enhancement Mode Field Effect Transistor

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Plastic Encapsulated Device

文件：107.69 Kbytes Page：5 Pages

MOSFET：Complementary

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is H

Plastic Encapsulated Device

文件：107.69 Kbytes Page：5 Pages

Complementary Enhancement Mode Field Effect Transistor

文件：584.62 Kbytes Page：9 Pages

Plastic Encapsulated Device

文件：107.69 Kbytes Page：5 Pages

TREK 605A

PRODUCT HIGHLIGHTS  Line and load regulation better than 0.002%  Automatic current limit feature to protect the instrument from output short circuits or overloads  Remote high voltage on/off feature ideal for use with automated or computercontrolled systems

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DC axial compact fan

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