30V Dual Asymmetric N-Channel AlphaMOS

General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and In

低压MOSFET (12V - 30V)

30V Dual Asymmetric N-Channel AlphaMOS

文件：583.44 Kbytes Page：10 Pages

RoHS and Halogen-Free Compliant

文件：526.08 Kbytes Page：10 Pages

30V Dual Asymmetric N-Channel AlphaMOS

General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and In

AM69x Processors, Silicon Revision 1.0

1 Features Processor cores: • Up to eight 64-bit Arm® Cortex®-A72 microprocessor subsystem at up to 2 GHz – 2MB shared L2 cache per quad-core Cortex®- A72 cluster – 32KB L1 D-Cache and 48KB L1 I-Cache per Cortex®-A72 core • Up to Four Deep Learning Accelerators: – Each with up to 8 Trilli

Antenna Driver

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