N-Channel MOSFET

■ Features ● VDS (V) = 30 V ● IDMAX (at VGS = 10 V) = 32 A ● RDS(ON) (at VGS = 10 V)

30V N-Channel AlphaMOS

General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Indust

低压MOSFET (12V - 30V)

封装/外壳：8-PowerSMD，扁平引线 包装：卷带（TR） 描述：MOSFET DFN 5X6 分立半导体产品 晶体管 - FET，MOSFET - 单个

2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

Two-Output Power Amplifier

Overview The LA6516 is a two-output power amplifier developed for use in both consumer and industrial equipment. Functions • High slew rate (1.0 V/µs) • High output current (IO max = 1.0 A) • Current limiter function • Wide operating voltage range (±2 to 18 V) • Supports single-voltage powe

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS6516 thru MPS6519 are PNP siliocn planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry.

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free