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型号 功能描述 生产厂家 企业 LOGO 操作
AON6206

30V N-Channel MOSFET

文件:244.75 Kbytes Page:6 Pages

AOSMD

万国半导体

AON6206

N-Channel 30-V (D-S) MOSFET

文件:1.16593 Mbytes Page:7 Pages

VBSEMI

微碧半导体

AON6206

MOSFET N-CH 30V 20A 8DFN

AOS

美国万代

High Voltage Synchronous Rectified Buck MOSFET Driver

The ISL6206 is a high voltage, high frequency, dual MOSFET driver specifically designed to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology in mobile computing applications. This driver combined with an Intersil Multi-Phase Buck PWM controller forms a complete s

INTERSIL

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L6206 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages

STMICROELECTRONICS

意法半导体

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L6206 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages

STMICROELECTRONICS

意法半导体

32K x 8 Bit Fast Static RAM

32K x 8 Bit Fast Static RAM The MCM6206BB is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device me

MOTOROLA

摩托罗拉

32K x 8 Bit Fast Static RAM

The MCM6206D is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability. This device meets JEDEC standards for functional

MOTOROLA

摩托罗拉

AON6206产品属性

  • 类型

    描述

  • 型号

    AON6206

  • 功能描述

    MOSFET N CH 30V 24A DFN5X6

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-5-18 16:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS(万代)
23+
标准封装
20000
正规渠道,只有原装!
AOS/万代
2450+
QFN
8850
只做原装正品假一赔十为客户做到零风险!!
AOS(万代)
25+
标准封装
10673
我们只是原厂的搬运工
AOS
23+
DFN5x6
3015
全新 发货1-2天
AOS/万代
2019+
DFN
6700
原厂渠道 可含税出货
AOS
24+
DFN-8
5000
全新原装正品,现货销售
AOS
26+
DFN
86910
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
ALPHA&OMEGASEMICONDUCTOR
23+
DFN8
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
AOS
12+PBF
DFN5x6
200000
AOS
24+
DFN5x6
94489
原装现货假一赔十

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