MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

30V N-Channel MOSFET

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Positive Center Tapped Silicon Recitifers 30 Amp(15A per diode)

Features: Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr= 200ns Max TO3 Type Package

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm