Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5802B/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by

低压共漏电池 MOSFET

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于锂电池的保护。这些“共漏”MOSFET具有低Rdson，可快速充电及延长电池寿命。 同时， Alpha and Omega Semiconductor拥有先进的CPS技术，拥有该技术的RigidCSP™系列产品，可以减少其在焊接过程中的翘曲，提高了产品在应用中的可靠性。

低压MOSFET (12V - 30V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术制造出性能领先的低压MOSFET。这些产品为DCDC、负载开关、BLDC及电源等应用量身定做。

封装/外壳：6-WFDFN 裸露焊盘 包装：散装 描述：MOSFET N-CH DUAL DFN 分立半导体产品 晶体管 - FET，MOSFET - 阵列

High Voltage Color Display Horizontal Deflection Output (No Damper Diode)

High Voltage Color Display Horizontal Deflection Output • High Breakdown Voltage : BVCBO=1500V • High Speed Switching : tF=0.1µs (Typ.) • Wide S.O.A • For C-Monitor(69KHz)

DC / DC Converter Applications

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET (MCH3308) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed sw

Dual Low-Noise, Voltage Feedback Op Amp

文件：420.76 Kbytes Page：12 Pages

Dual Low-Noise, Voltage Feedback Op Amp

文件：420.76 Kbytes Page：12 Pages

Dual Low-Noise, Voltage Feedback Op Amp

文件：420.76 Kbytes Page：12 Pages