Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp

Description: The NTE5800 through NTE5809 silicon rectifiers are designed for use in power supplies and other applications having need of a device with the following features: ● High Current to Small Size ● High Surge Current Capability ● Low Forward Voltage Drop

High Intensity LED in 5 mm Clear Package

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High Efficiency Blue LED, 5 mm Untinted Non - Diffused Package

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High Efficiency LED, 5 mm Untinted Non-Diffused

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High Intensity LED, 5 mm Untinted Non-Diffused

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