P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AON4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4701 is Pb-free (meets ROH

ZENER DIODES

FEATURES ♦ Silicon Planar Zener Diodes ♦ Standard Zener voltage tolerance is ± 5. Other tolerances are available upon request. ♦ High temperature soldering guaranteed: 250°C/10 seconds set terminals. ♦ These diodes are also available in DO-35 case with type designation 1N4681 1N4717 and SO

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS ■ DESIGNED FOR CLASS AB LINEAR OPERATION ■ COMMON EMITTER ■ INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50 MIN. ■ INHERENT RUGGEDNESS:

Silicon Epitaxial Planar Z-Diodes

Features ● Zener voltage specified at 50 μA ● Maximum delta VZ given from 10 μA to 100 μA ● Very high stability ● Low noise Applications     Voltage stabilization

LM4701 Overture??Audio Power Amplifier Series 30W Audio Power Amplifier with Mute and Standby Modes

文件：541.38 Kbytes Page：15 Pages

LM4701 Overture??Audio Power Amplifier Series 30W Audio Power Amplifier with Mute and Standby Modes

文件：541.38 Kbytes Page：15 Pages