Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

20V Dual N-Channel MOSFET

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MOSFET：Dual-Channel

20V Dual N-Channel MOSFET

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The OSIRE E3323 is designed for automotive ambient applications.

Features - Package: white SMD package, colorless clear silicone resin - Chip technology: Thinfilm / ThinGaN - Color: λdom = 626 nm (● red); λdom = 533 nm (● true green); λdom = 462 nm (● blue) - Corrosion Robustness Class: 3B - Qualifications: AEC-Q102 Qualified - ESD: 2 kV acc. to ANSI/ESDA

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