30V N-Channel MOSFET

General Description The AOL1428A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transi

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transi

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transi

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件：81.03 Kbytes Page：6 Pages

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件：81.03 Kbytes Page：6 Pages