| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOD7S65 | isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 7.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.65Ω (Max) • 100 avalanche tested • Minimum Lot-to-L | ISC 无锡固电 |   | |
AOD7S65 | 650V 7A a MOS Power Transistor General Description The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche ca | AOSMD 万国半导体 | | |
AOD7S65 | 高压MOSFET (500V - 1000V) | AOS 美国万代 | | |
650V 7A a MOS Power Transistor General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 | | ||
N-Channel 650V (D-S)Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | ||
650V 7A a MOS General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 | | ||
isc N-Channel MOSFET Transistor 文件：299.08 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：314.3 Kbytes Page：2 Pages | ISC 无锡固电 | |
AOD7S65产品属性
- 类型
描述
- 型号
AOD7S65
- 功能描述
MOSFET N-CH 650V 7A TO252
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
24+ |
TO-252 |
17976 |
公司现货库存 支持实单 |
|||
AO/万代 |
24+ |
NA/ |
8250 |
原装现货,当天可交货,原型号开票 |
|||
AOS/万代 |
25+ |
TO-252 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ALPHA |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
AOS/万代 |
23+ |
TO252 |
30000 |
原装正品假一罚十,代理渠道价格优 |
|||
AOS/万代 |
1511PB |
TO-252 |
770 |
||||
AOS万代 |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
AOS/万代 |
21+ |
TO-252 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/万代 |
2450+ |
SOT-252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AOS/万代 |
2019+ |
TO252 |
3333 |
原厂渠道 可含税出货 |
AOD7S65芯片相关品牌
AOD7S65规格书下载地址
AOD7S65参数引脚图相关
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- AOFW102-B
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- AOFD110N-Y
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2019-3-28
DdatasheetPDF页码索引
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