N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD496 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOD496 is Pb-free (meets ROHS & Sony 259 specifications). AOD496L is a

丝印代码：D-PARK；isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤9.5mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Be suitable for use as a high side switch in SMPS and general purpose applications.

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel Enhancement Mode Field Effect Transistor

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MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

丝印代码：DPAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 57A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) = 9mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=55A,RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

文件：147.42 Kbytes Page：6 Pages

30V N-Channel MOSFET

文件：495.85 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：202.41 Kbytes Page：6 Pages

30V N-Channel MOSFET

文件：495.85 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode

Features 1. High speed response (response frequency : 40MHz) 4. Lead bending type may be used. 2. Peak emission wavelength λp : TYP. 880 mm 3. Half intensity angle ∆θ : ± 22˚ ■ Applications 1. AV equipment 2. Personal computers 3. Portable information terminal equipment ■

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont