N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD458 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD458 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

丝印代码：DPAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 14A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.28Ω (Max) • 100 avalanche tested • Minimum Lot-to-

中压MOSFET (40V - 400V)

250V, 14A N-Channel MOSFET

250V,14A N-Channel MOSFET

文件：266.73 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD458 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD458 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

250V,14A N-Channel MOSFET

文件：266.73 Kbytes Page：6 Pages

HIGH VOLTAGE VIDEO AMPLIFIERS

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuits

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * Ptot= 1 Watt COMPLEMENTARY TYPE – FCX558 PARTMARKING DETAIL – N58

N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier

Features: Very Low Noise Low Gate Current Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . .