丝印代码：DPAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 50A@ TC=25℃ • Drain Source Voltage- : VDSS= 25V(Min) • Static Drain-Source On-Resistance : RDS(on) = 6mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel 20-V (D-S)175 C MOSFET

FEATURES ● TrenchFET Power MOSFET ● 175°C Maximum Junction Temperature ● 100 Rg Tested

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

文件：198.62 Kbytes Page：6 Pages

N-Channel 20-V (D-S)175 C MOSFET

FEATURES ● TrenchFET Power MOSFET ● 175°C Maximum Junction Temperature ● 100 Rg Tested

Plastic Encapsulated Device

Product Description: The AOD456A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456Ais Pb-free (meets ROHS & Sony 259 specifications). A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

Plastic Encapsulated Device

Product Description: The AOD456A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456Ais Pb-free (meets ROHS & Sony 259 specifications). A

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

N-Channel Enhancement Mode Field Effect Transistor

文件：198.62 Kbytes Page：6 Pages

Plastic Encapsulated Device

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

Quadruple ESD transient voltage suppressor

DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 5.6 V level. FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT457 surface mount package • Common anode configuration • Non-clamping range −0.5

High Speed Response Type OPIC Light Detector

■ Features 1. High speed response (t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ■ Applications 1. Laser beam printers

N-Channel Silicon JFET General Purpose Amp, Switch

Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications.

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a