N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. Standard product AOD450 is Pb-free (meets ROHS & Sony 259 specifications).

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 3.8A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.7Ω (Max) • 100 avalanche tested • Minimum Lot-to-

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=5A,RDS(ON)≤0.47Ω @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced hig

N-Channel Enhancement Mode Field Effect Transistor

文件：186.79 Kbytes Page：6 Pages

中压MOSFET (40V - 400V)

200V N-Channel MOSFET

General Description The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=9A,RDS(ON)≤0.4Ω @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 6A@ TC=25℃ • Drain Source Voltage- : VDSS=200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.4Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. Standard product AOD450 is Pb-free (meets ROHS & Sony 259 specifications).

N-Channel MOSFET 200V, 6.0A, 0.650

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

N-Channel Enhancement Mode Field Effect Transistor

文件：186.79 Kbytes Page：6 Pages

中压MOSFET (40V - 400V)

高压MOSFET (500V - 1000V)

Industrial 15/16 (24mm) diameter 1/2 watt composition variable resistor

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Supporting the Intel Celeron processor

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HEADER STRIPS .100??Grid Solder Tail Double Row

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Ultra-Ripple, Long-life, Inverter Grade, Radial Leaded The Ultimate in Ripple for Plug-in

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