isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 6A@ TC=25℃ • Drain Source Voltage- : VDSS=200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.4Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=9A,RDS(ON)≤0.4Ω @VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high

200V N-Channel MOSFET

General Description The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary

中压MOSFET (40V - 400V)

HIGH VOLTAGE PLANAR RESISTORS

High Voltage Planar Resistors 4500 Series •Voltages up to 20kV dc. •Powers up to 4.5 Watts •TCR to 50ppm/°C •Customs design service available •Planar construction gives low inductance and capacitance Application Notes The terminations should not be bent closer than 1.5m

High Voltage Planar Resistors

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customs design service available

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