N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 2

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 2

N-Channel Enhancement Mode Field Effect Transistor

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD43

PNP SILICON EPIBASE TRANSISTORS

PNP Silicon Epibase Transistors

PNP NPN Darlington H-bridge

PNP + NPN Darlington H-bridge

PNP NPN Darlington H-bridge

PNP + NPN Darlington H-bridge

Thermopile Detector

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