30V N-Channel MOSFET

General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Product Summary V

低压MOSFET (12V - 30V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术制造出性能领先的低压MOSFET。这些产品为DCDC、负载开关、BLDC及电源等应用量身定做。

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：293.25 Kbytes Page：2 Pages

丝印代码：AOD4184A；40V N-Channel MOSFET

Features Vds=60V, ID=53A RDS(ON)12m0@VGS=10V RDS(ON) 17m@VGS-4.5V

80V N-Channel MOSFET

General Description The AOD4180 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

80V N-Channel MOSFET

General Description The AOD4182 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

40V N-Channel MOSFET

General Description\nThe AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications.Product Summary\nVDS 40V\nID(at VGS=10V) 5

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

40V N-Channel MOSFET

General Description The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high current load applications. Product Summary VDS 40V ID(at VGS=10V) 50A RDS(ON)(at VGS=10V)

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free* Features

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=- 40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

丝印代码：D4185；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

丝印代码：40P04；P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=- 40A RDS(ON)

丝印代码：D4185；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

丝印代码：DPAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. Features VDS(V) = 40V ID= 50A (VGS= 10V) RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications Features VDS (V) = -40V ID = -45A (VGS = -1

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -45A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

丝印代码：DPAK；isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= -40A@ TC=25℃ • Drain Source Voltage- : VDSS=-40V(Min) • Static Drain-Source On-Resistance : RDS(on) =22mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -40A (VGS = -

丝印代码：D4189；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

Application Reverse Battery protection » Load switch o Power management PWM Application

丝印代码：D4189；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

N-Channel 80 V (D-S) MOSFET

文件：1.94622 Mbytes Page：9 Pages

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：309.98 Kbytes Page：2 Pages

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：309.77 Kbytes Page：2 Pages

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：293.91 Kbytes Page：2 Pages

N-Channel MOSFET uses advanced trench technology

文件：2.73793 Mbytes Page：5 Pages

N-Channel 4 -V (D-S) MOSFET

文件：1.00541 Mbytes Page：8 Pages

40V N-Channel MOSFET

文件：292.55 Kbytes Page：6 Pages

40V N-Channel MOSFET

文件：292.55 Kbytes Page：6 Pages

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：293.5 Kbytes Page：2 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.69059 Mbytes Page：5 Pages

N-Channel 40-V (D-S) MOSFET

文件：1.00447 Mbytes Page：8 Pages

P-Channel Enhancement Mode Field Effect Transistor

文件：275.54 Kbytes Page：6 Pages

P-Channel Enhancement Mode Field Effect Transistor

文件：275.54 Kbytes Page：6 Pages

包装：卷带（TR） 描述：MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

包装：卷带（TR） 描述：MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

Improved, SPST/SPDT Analog Switches

General Description Maxim’s redesigned DG417/DG418/DG419 precision, CMOS, monolithic analog switches now feature guaanteed on-resistance matching (3Ω max) between switches and guaranteed on-resistance flatness over the signal range (4Ω max). These switches conduct equally well in either direction

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

1.2關A Max, Single/Dual/Quad, Single-Supply Op Amps

1.2μA Max, Single/Dual/Quad, Single-Supply Op Amps Applications Battery-Powered Systems Medical Instruments Electrometer Amplifiers Intrinsically Safe Systems Photodiode Pre-Amps pH Meters

Dual High-Speed, Low-Power Line Driver

文件：280.71 Kbytes Page：12 Pages

Dual High-Speed, Low-Power Line Driver

文件：280.71 Kbytes Page：12 Pages