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位置：首页 > IC中文资料第34页 > AOD418

AOD418价格

参考价格：￥3.2954

型号：AOD4180 品牌：Alpha 备注：这里有AOD418多少钱，2026年最近7天走势，今日出价，今日竞价，AOD418批发/采购报价，AOD418行情走势销售排行榜，AOD418报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AOD418

30V N-Channel MOSFET

General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Product Summary V

AOSMD

万国半导体

AOD418

isc N-Channel MOSFET Transistor

文件：293.25 Kbytes Page：2 Pages

ISC

无锡固电

AOD418

低压MOSFET (12V - 30V)

AOS

美国万代

AOD4180

80V N-Channel MOSFET

General Description The AOD4180 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

AOSMD

万国半导体

AOD4182

80V N-Channel MOSFET

General Description The AOD4182 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

AOSMD

万国半导体

AOD4184

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

AOSMD

万国半导体

AOD4184A

40V N-Channel MOSFET

General Description The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high current load applications. Product Summary VDS 40V ID(at VGS=10V) 50A RDS(ON)(at VGS=10V)

AOSMD

万国半导体

AOD4184A

40V N-Channel MOSFET

Features Vds=60V, ID=53A RDS(ON)12m0@VGS=10V RDS(ON) 17m@VGS-4.5V

TECHPUBLIC

台舟电子

AOD4184L

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

AOSMD

万国半导体

AOD4185

P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

VBSEMI

微碧半导体

AOD4185

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free* Features

AOSMD

万国半导体

AOD4185

P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=- 40A RDS(ON)

TECHPUBLIC

台舟电子

AOD4185

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=- 40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

AOD4185

P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

UMW

友台半导体

AOD4185

P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

EVVOSEMI

翊欧

AOD4186

Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

AOD4186

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. Features VDS(V) = 40V ID= 50A (VGS= 10V) RDS(ON)

AOSMD

万国半导体

AOD4187

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications Features VDS (V) = -40V ID = -45A (VGS = -1

AOSMD

万国半导体

AOD4187

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -45A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

AOD4189

P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

EVVOSEMI

翊欧

AOD4189

P-Channel Enhancement Mode Field Effect Transistor

Application Reverse Battery protection » Load switch o Power management PWM Application

TECHPUBLIC

台舟电子

AOD4189

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -40A (VGS = -

AOSMD

万国半导体

AOD4189

P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

VBSEMI

微碧半导体

AOD4189

P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

UMW

友台半导体

AOD4189

isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= -40A@ TC=25℃ • Drain Source Voltage- : VDSS=-40V(Min) • Static Drain-Source On-Resistance : RDS(on) =22mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

ISC

无锡固电

AOD4180

isc N-Channel MOSFET Transistor

文件：309.98 Kbytes Page：2 Pages

ISC

无锡固电

AOD4180

N-Channel 80 V (D-S) MOSFET

文件：1.94622 Mbytes Page：9 Pages

VBSEMI

微碧半导体

AOD4182

isc N-Channel MOSFET Transistor

文件：309.77 Kbytes Page：2 Pages

ISC

无锡固电

AOD4182

MOSFET：N-Channel

AOS

美国万代

AOD4184

40V N-Channel MOSFET

AOS

美国万代

AOD4184

isc N-Channel MOSFET Transistor

文件：293.91 Kbytes Page：2 Pages

ISC

无锡固电

AOD4184

N-Channel MOSFET uses advanced trench technology

文件：2.73793 Mbytes Page：5 Pages

DOINGTER

杜因特

AOD4184

40V N-Channel MOSFET

文件：292.55 Kbytes Page：6 Pages

AOSMD

万国半导体

AOD4184

N-Channel 4 -V (D-S) MOSFET

文件：1.00541 Mbytes Page：8 Pages

VBSEMI

微碧半导体

AOD4184_09

40V N-Channel MOSFET

文件：292.55 Kbytes Page：6 Pages

AOSMD

万国半导体

AOD4184A

isc N-Channel MOSFET Transistor

文件：293.5 Kbytes Page：2 Pages

ISC

无锡固电

AOD4184A

N-Channel MOSFET uses advanced trench technology

文件：1.69059 Mbytes Page：5 Pages

DOINGTER

杜因特

AOD4184A

N-Channel 40-V (D-S) MOSFET

文件：1.00447 Mbytes Page：8 Pages

VBSEMI

微碧半导体

AOD4185

P-Channel Enhancement Mode Field Effect Transistor

文件：275.54 Kbytes Page：6 Pages

AOSMD

万国半导体

AOD4185_12

P-Channel Enhancement Mode Field Effect Transistor

文件：275.54 Kbytes Page：6 Pages

AOSMD

万国半导体

AOD4185_DELTA

包装：卷带（TR） 描述：MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

ETC

知名厂家

AOD4185L_DELTA

包装：卷带（TR） 描述：MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

ETC

知名厂家

418

Low Voltage and Power Applications

文件：992.1 Kbytes Page：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

418

SURFACE MOUNT FUSES

文件：50.85 Kbytes Page：2 Pages

LITTELFUSE

力特

418 SM

Scalpels and Blades

文件：1.57367 Mbytes Page：5 Pages

IDEAL-TEK

418P

Radial-lead. Round profile.

文件：294.9 Kbytes Page：8 Pages

CDE

AB418-R

Mini Gender Changer

文件：104.97 Kbytes Page：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

AOD418产品属性

  • 类型

    描述

  • 型号

    AOD418

  • 功能描述

    MOSFET N-CH 30V 13.5A TO252

  • RoHS

    是

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

AOD418供应商更多...

更新时间：2026-1-28 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市盈慧通电子有限公司
AOD418
AOS(万代)
2511
标准封装
20000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
洪芯国际半导体（深圳）有限公司
AOD418
AOS
26+
TO220-3
86720
全新原装正品价格最实惠 假一赔百
询价
贸泽芯城（深圳）电子科技有限公司
AOD418
AOS/万代
23+
TO252
32465
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市凌旭科技有限公司
AOD418
ALPHA
2016+
TO252
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市得捷芯城科技有限公司
AOD4182
AOS(万代)
25+
标准封装
10663
我们只是原厂的搬运工
询价
深圳市赛特兴科技有限公司
AOD418
AOS(万代)
23+
标准封装
20000
正规渠道,只有原装!
询价
深圳市星辰微电科技有限公司
AOD418
AOS/万代
25+
TO252
25000
AOS/万代全系列在售
询价
深圳市百诺芯科技有限公司
AOD418
AOS/万代
23+
TO-252
24190
原装正品代理渠道价格优势
询价
艾睿（深圳）半导体有限公司
AOD418
AOS/万国
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市威尔健半导体有限公司
AOD418
AOS/万代
23+
TO-252
50000
全新原装正品现货,支持订货
询价

AOD418芯片相关品牌

AOD418规格书下载地址

AOD418参数引脚图相关

AOD418数据表相关新闻

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    AOD413A 场效应管 AOS/万代 封装TO252

    2022-7-16

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    AOD442找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: AOD442 Rohs Code: Yes Part Life Cycle Code: Active Ihs Manufacturer: ALPHA & OMEGA SEMICONDUCTOR LTD Package Description: SMALL OUTLINE， R-PSSO-G2 Reach Compliance Code: compliant ECCN Co

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  • AOD438全新原装现货

    AOD438，全新原装现货0755-82732291当天发货或门市自取.

    2021-1-10

  • AOD4054

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    2020-10-13

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