isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -45A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications Features VDS (V) = -40V ID = -45A (VGS = -1

P-Channel Enhancement Mode Field Effect Transistor

Lockit™ Loops and Clips

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Lockit Loops and Clips

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Touch Screen Controller for Dual Touch Gestures

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