P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -30V

丝印代码：DPAK；isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=-25A@ TC=25℃ • Drain Source Voltage- : VDSS=-30V(Min) • Static Drain-Source On-Resistance : RDS(on) = 34mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

P沟道MOSFET (8V - 60V)

P-Channel Enhancement Mode Field Effect Transistor

-30V P-ch Fast Switching MOSFET

P-Channel Enhancement Mode Field Effect Transistor

文件：144.24 Kbytes Page：6 Pages

P-Channel Enhancement Mode Field Effect Transistor

文件：144.24 Kbytes Page：6 Pages

LC2MOS Precision Mini-DIP Analog Switch

GENERAL DESCRIPTION The ADG417 is a monolithic CMOS SPST switch. This switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. FEATURES 44 V Supply Maximum Ratings VSS to VDD Analo

LC2MOS Precision Mini-DIP Analog Switch

GENERAL DESCRIPTION The ADG417 is a monolithic CMOS SPST switch. This switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. FEATURES 44 V Supply Maximum Ratings VSS to VDD Analo

UHF variable capacitance diode

DESCRIPTION The BB417 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Hermetically sealed leaded glass SOD68 (DO-34) package • C15: 3 pF; ratio: 3.5. APPLICATION

NPN SILICON PLANAR AVALANCHE TRANSISTOR

FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators

Compact, Surface Mount Ultra-high Speed Response OPIC Photocoupler

■ Features 1. Mini-flat package 2. Ultra-high speed response ( tPHL , t PLH : TYP. 0.3 µs at R L = 1.9kΩ ) 3. Isolation voltage between input and output ( Viso : 2 500 Vrms ) 4. High instantaneous common mode rejection voltage ( CM H : TYP. 1kV/ µ s ) 5. Recognized by UL(No.64380) ■