P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -30V

isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=-25A@ TC=25℃ • Drain Source Voltage- : VDSS=-30V(Min) • Static Drain-Source On-Resistance : RDS(on) = 34mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

P-Channel Enhancement Mode Field Effect Transistor

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-30V P-ch Fast Switching MOSFET

P沟道MOSFET (8V - 60V)

P-Channel Enhancement Mode Field Effect Transistor

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WIPER SEALS

DESCRIPTION The BECA 417 profile is a stepped double acting wiper seal composed of two rubber wiping lips. APPLICATIONS Agriculture Mobile machinery Material handling - Lifting Hydraulic cylinders

LC2MOS Precision Mini-DIP Analog Switch

GENERAL DESCRIPTION The ADG417 is a monolithic CMOS SPST switch. This switch is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. FEATURES 44 V Supply Maximum Ratings VSS to VDD Analo

SURFACE MOUNT FUSES

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Single & Dual Output, 4W Ultra-Wide Input Range DC/DC Converters

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ALUMINUM CHASSIS

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