N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOD414L ( Green Product ) is offered in a lead-free package.

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 85A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION · Motor Drive · DC-DC Converter · High Frequency Switching and Synchronous Rectification

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 43A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel SDMOSTM POWER Transistor

General Description The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicati

N-Channel SDMOSTM POWER Transistor

General Description The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicati

N-Channel 20-V (D-S)175 C MOSFET

FEATURES • TrenchFET Power MOSFET • 175°C Maximum Junction Temperature • 100 Rg Tested

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel SDMOSTM Power Transistor

General Description The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicat

30V N-Channel MOSFET

General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent R DS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general pur

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 55A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =5.6mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel SDMOSTM POWER Transistor

N-Channel SDMOS™ Power Transistor

N-Channel Enhancement Mode Field Effect Transistor

文件：111.96 Kbytes Page：5 Pages

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Detectable Buried Barricade Tapes 400 Series

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