N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specificatio

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

文件：200.97 Kbytes Page：6 Pages

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel Enhancement Mode Field Effect Transistor

文件：200.97 Kbytes Page：6 Pages

Integrated Soldier Power and Data Management System (ISPDS) with Integrated SOM

FEATURES DESCRIPTION The modern digital soldier is a fully equipped, advanced weapon and communication systems - outfitted with a multitude of electronic devices. These devices, such as a navigation systems, battery packs, headsets, warning sensors, video visor for weapons, night vision glass

Capacity (20-hour) 77Ah

文件：248.13 Kbytes Page：1 Pages

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages

Position Sensor

文件：242.42 Kbytes Page：3 Pages

4 and 7-port industrial-grade USB hubs

文件：703.3 Kbytes Page：4 Pages